DMN2990UFA document number: ds35765 rev. 3 - 2 1 of 6 www.diodes.com june 2013 ? diodes incorporated DMN2990UFA new product 20v n-channel enhanc ement mode mosfet product summary v (br)dss r ds(on) max i d max t a = +25c 20v 0.99? @ v gs = 4.5v 510ma 1.2? @ v gs = 2.5v 470ma 1.8? @ v gs = 1.8v 380ma 2.4? @ v gs = 1.5v 330ma description this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. applications ? general purpose interfacing switch ? power management functions ? analog switch features and benefits ? low package profile, 0.4mm maximum package height ? 0.48mm 2 package footprint, 16 times smaller than sot23 ? low on-resistance ? very low gate threshold voltage, 1.0v max ? esd protected gate ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: x2-dfn0806-3 ? case material: molded plastic, ?g reen? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau ov er copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.001 grams (approximate) ordering information (note 4) part number case packaging DMN2990UFA-7b x2-dfn0806-3 10k/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html. marking information source body diode gate protection diode gate drain nw = product type marking code DMN2990UFA-7b top view bar denotes gate and source side bottom view equivalent circuit top view package pin configuration d s g esd protected nw e4
DMN2990UFA document number: ds35765 rev. 3 - 2 2 of 6 www.diodes.com june 2013 ? diodes incorporated DMN2990UFA new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol v alue units drain-source voltage v dss 20 v gate-source voltage v gss 8 v continuous drain current (note 5) v gs = 4.5v steady state t a = +25c t a = +70c i d 510 410 ma t<10s t a = +25c t a = +70c i d 610 490 ma continuous drain current (note 5) v gs = 1.8v steady state t a = +25c t a = 70c i d 380 300 ma t<10s t a = +25c t a = +70c i d 450 360 ma pulsed drain current (note 6) i dm 800 ma thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol v alue units total power dissipation (note 5) steady state p d 400 mw thermal resistance, junction to ambient (note 5) steady state r ? ja 310 c/w t<10s 220 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current @t c = +25c i dss ? ? 100 na v ds = 16v, v gs = 0v ? ? 50 v ds = 5v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 5v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs(th) 0.4 ? 1.0 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds(on) ? 0.60 0.99 v gs = 4.5v, i d = 100ma ? 0.75 1.2 v gs = 2.5v, i d = 50ma ? 0.90 1.8 v gs = 1.8v, i d = 20ma ? 1.2 2.4 v gs = 1.5v, i d = 10ma ? 2.0 ? v gs = 1.2v, i d = 1ma forward transfer admittance |y fs | 180 ? ? ms v ds = 10v, i d = 400ma diode forward voltage v sd - 0.6 1.0 v v gs = 0v, i s = 150ma dynamic characteristics (note 8) input capacitance c iss ? 27.6 55.2 pf v ds = 16v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 4.0 8.0 pf reverse transfer capacitance c rss ? 2.8 5.6 pf total gate charge q g ? 0.5 ? nc v gs = 4.5v, v ds = 10v, i d = 250ma gate-source charge q gs ? 0.07 ? nc gate-drain charge q gd ? 0.07 ? nc turn-on delay time t d(on) ? 4.0 ? ns v dd = 10v, v gs = 4.5v, r l = 47 ? , r g = 10 ? , i d = 200ma turn-on rise time t r ? 3.3 ? ns turn-off delay time t d(off) ? 19.0 ? ns turn-off fall time t f ? 6.4 ? ns notes: 5. device mounted on fr-4 pcb, with minimum recommended pad layout. 6. device mounted on minimum recommended pad layout test board, 10 s pulse duty cycle = 1%. 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to product testing.
DMN2990UFA document number: ds35765 rev. 3 - 2 3 of 6 www.diodes.com june 2013 ? diodes incorporated DMN2990UFA new product 0.0 0.2 0.4 0.6 0.8 0 0.5 1 1.5 2 2.5 3 3.5 4 v , drain-source voltage (a) fig. 1 typical output characteristics ds i , drain current (a) d i (a) @ v = 1.2v dgs i (a) @ v = 1.5v dgs i (a) @ v = 2.0v dgs i (a) @ v = 2.5v dgs i (a) @ v = 3.0v dgs i (a) @ v =4.0v dgs i (a) @ v = 4.5v dgs 0 0.2 0.4 0.6 0.8 0 0.5 1 1.5 2 2.5 3 v , gate-source voltage (v) fig. 2 typical transfer characteristics gs v = 5.0v ds ave v (v) @ -55c gs ave v (v) @ 25c gs ave v (v) @ 85c gs ave v (v) @ 125c gs ave v (v) @ 150c gs i , drain current(a) d 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 i , drain-source current fig. 3 typical on-resistance vs. drain current and gate voltage d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) ? r ave @ v = 1.8v ds(on) gs ? r ave @ v = 4.5v ds(on) gs ? 0 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 v = 4.5v gs ave r (r) ds(on) @ -55c ave r (r) ds(on) @ 25c ave r (r) ds(on) @ 85c ave r (r) ds(on) @ 150c ave r (r) ds(on) @ 125c i drain current (a) fig. 4 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t , junction temperature( c) fig. 5 on-resistance variation with temperature j ? r , drain-source on-resistance (normalized) ds(on) r ave @ v = 2.5v, i = 150ma ds(on) gs d ? r ave @ v = 4.5v, i = 300ma ds(on) gs d ? r , d r a i n - s o u r c e o n - r es i s t a n c e ( ) ds(on) ? 0 0.2 0.4 0.6 0.8 1 1. 2 -50 -25 0 25 50 75 100 125 150 t , junction temperature( c) fig. 6 on-resistance variation with temperature j ? r @ v = 2.5v, i = 150ma ds(on) gs d ? r @ v = 4.5v, i = 300ma ds(on) gs d ?
DMN2990UFA document number: ds35765 rev. 3 - 2 4 of 6 www.diodes.com june 2013 ? diodes incorporated DMN2990UFA new product 0 0.2 0.4 0.6 0.8 1 1. 2 -50 -25 0 25 50 75 100 125 150 t , junction temperature( c) fig. 7 gate threshold variation vs. ambient temperature j ? v , gate threshold voltage (v) gs(th) v (v) @ i = 250a th d v (v) @ i = 1ma th d 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 1.2 v (v) @ v = 0v, t = 25c sd gs a v , source- drain voltage (v) fig. 8 diodes forward voltage vs. current sd i, s o u r c e c u r r e n t (a) s v , drain-source voltage (v) fig. 9 typical junction capacitance ds c t , j u n c t i o n c a p a c i t an c e (p f ) 50 40 30 20 10 0 10 15 20 5 0 f = 1mhz ciss ave (pf) coss ave (pf) crss ave (pf) 1 10 100 1000 2 4 6 8 10 12 14 16 18 20 v , drain-source voltage (v) fig. 10 typical drain-source leakage current vs. voltage ds i , leakage current (na) dss i (na) ave @ 25c dss i (na) ave @ 85c dss i (na) ave @ 125c dss i (na) ave @ 150c dss 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 q - (nc) fig. 11 gate charge characteristics g v = 10v ds
DMN2990UFA document number: ds35765 rev. 3 - 2 5 of 6 www.diodes.com june 2013 ? diodes incorporated DMN2990UFA new product package outline dimensions please see ap02002 at http://www.diodes.com/dat asheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. x2-dfn0806-3 dim min max typ a 0.375 0.40 0.39 a1 0 0.05 0.02 a3 - - 0.10 b 0.10 0.20 0.15 d 0.55 0.65 0.60 d1 0.35 0.45 0.40 e 0.75 0.85 0.80 e1 0.20 0.30 0.25 e - - 0.35 k - - 0.20 l 0.20 0.30 0.25 all dimensions in mm dimensions value (in mm) c 0.350 x 0.200 x1 0.450 x2 0.550 y 0.375 y1 0.475 y2 1.000 x1 x2 y2 y1 y (2x) x (2x) c a a3 seating plane a1 d e b (2x) l (2x) e d1 e1 pin#1 r0.075 k
DMN2990UFA document number: ds35765 rev. 3 - 2 6 of 6 www.diodes.com june 2013 ? diodes incorporated DMN2990UFA new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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